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		<issn>0040-6090</issn>
		<citationkey>AlmeidaDiniTravFerr:2005:ElChDo</citationkey>
		<title>Electrochemical characterization of doped diamond-coated carbon fibers at different boron concentrations</title>
		<year>2005</year>
		<month>Aug.</month>
		<secondarytype>PRE PI</secondarytype>
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		<size>236 KiB</size>
		<author>Almeida,  E. C.,</author>
		<author>Diniz, Alessandra Venâncio,</author>
		<author>Trava-Airoldi, Vladimir Jesus,</author>
		<author>Ferreira, Neidenei Gomes,</author>
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		<affiliation>Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais, (INPE, LAS),</affiliation>
		<affiliation>CTA Div Mat, Sao Jose Dos Campos,</affiliation>
		<journal>Thin Solid Films</journal>
		<volume>485</volume>
		<number>1-2</number>
		<pages>241-246</pages>
		<transferableflag>1</transferableflag>
		<contenttype>External Contribution</contenttype>
		<keywords>carbon fibers, diamond films, doping p-type, electrode arrangement / VAPOR-DEPOSITED DIAMOND, POLYCRYSTALLINE DIAMOND, ELECTRODES, FILMS, IMPEDANCE, KINETICS.</keywords>
		<abstract>Doped diamond films have been deposited on carbon fibers (felt) obtained from polyacrylonitrile at different levels of boron doping. For a successful coating of the fibers, an ultra sonic pretreatment in a bath of diamond powder dissolved in hexane was required. Films were grown on both sample sides, simultaneously, by hot filament-assisted chemical vapour deposition technique at 750 degrees C from a 0.5% H-2/CH4 mixture at a total pressure of 6.5 x 10(3) Pa. Boron was obtained from H-2 forced to pass through a bubbler containing B2O3 dissolved in methanol. The doping level studied corresponds to films with acceptor concentrations in the range of 6.5 x 10(18) to 1.5 x 10(21) cm(-3), obtained from Mott-Schottky plots. Scanning electron microscopy analyses evidenced fibers totally covered with high quality polycrystalline boron-doped diamond film, also confirmed by Raman spectroscopy spectra. Diamond electrodes grown on carbon fibers demonstrated similar electrochemical behavior obtained from films on Si substrate, for ferri/ferrocyanide redox couple as a function of boron content. The boron content influences electrochemical surface area. A lower boron concentration provides a higher growth rate that results in a higher surface area. (c) 2005 Elsevier B.V All rights reserved..</abstract>
		<area>FISMAT</area>
		<language>en</language>
		<targetfile>electrochemical diamond.pdf</targetfile>
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